J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic Crystals
Page(s) Pr10-175 - Pr10-177
International Workshop on Electronic Crystals

J. Phys. IV France 09 (1999) Pr10-175-Pr10-177

DOI: 10.1051/jp4:19991044

Nano-fabrication of CDW and its negative resistance phenomenon

H. Kubota1, T. Sumita1, S. Takami1, T. Shinada2 and I. Ohdomari2

1  Department of Electrical Engineering and Computer Science, Kumamoto University, Kurokami 2-39-1, Kumamoto 860-8555, Japan
2  Waseda University, Tokyo, Japan

Nano-fabrication of CDW (nano-CDW) with sub 0.1 micrometer thick has been successfully formed by applying of focused-ion-beam to the one-dimensional conductor, molybdenum blue bronze (K0.3MoO3) crystal. The nano-CDW characteristically shows negative resistance above the threshold fields, which monotonously increased with decreasing temperature. The nano-fabrication is completed via two steps procedure. 1 st : Hydrogen ion beam irradiation to the K0.3MoO3 crystal makes no-CDW layer by hydrogen atoms as excess-donar at 40-100 nm depth, where CDW at the surface of the crystal was isolated from the bulk side. 2 nd : Scanning focused silicon ion beam makes amorphous MoO3 in line and space patterns, where CDW at the surface are isolated as real one-dimensional region. The one-dimensionality of electrons has been confirmed by negative magnetic resistance, which magnitude should be reduced with decreasing dimensionality.

© EDP Sciences 1999