Numéro |
J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic CrystalsECRYS-99 |
|
---|---|---|
Page(s) | Pr10-101 - Pr10-104 | |
DOI | https://doi.org/10.1051/jp4:19991026 |
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-101-Pr10-104
DOI: 10.1051/jp4:19991026
Mobility of gliding dislocation loops and their contribution to the conductivity of CDW-conductors
S.N. Artemenko1, F. Gleisberg2 and W. Wonneberger21 Institute for Radioengineering and Electronics of the Russian Academy of Sciences, 103907 Moscow, Russia
2 Universität Ulm, Abteilung für Mathematische Physik, 89069 Ulm, Germany
Abstract
We study theoretically structure, drift velocity, and resistivity contribution of gliding phase-dislocation
loops in the electronic crystal of a charge density wave (CDW). It is shown that both structure
and mobility of these dislocations are determined by the interplay between Coulomb and interchain interaction.
CDW deformations due to the dislocation induce changes of the local quasiparticle density
which in turn affect the deformation of the CDW and the structure of the dislocation. It leads to different
length, energy scales, and the mobility of dislocations for semimetallic and semiconducting CDW
conductors and to a pronounced temperature dependence in the latter materials. The drift velocity of
dislocations exceeds the CDW velocity. As temperature decreases it decreases, and the convective contribution
to the conductivity eventually becomes smaller than the additional quasiparticle contribution
induced by the phase deformations near the dislocation.
© EDP Sciences 1999