J. Phys. IV France
Volume 09, Numéro PR9, September 19993rd European Mechanics of Materials Conference on Mechanics and Multi-Physics Processes in Solids : Experiments, Modelling, Applications
|Page(s)||Pr9-83 - Pr9-94|
J. Phys. IV France 09 (1999) Pr9-83-Pr9-94
The relaxation of epitaxial islandsS.P.A. Gill and A.C.F. Cocks
Department of Engineering, Leicester University, Leicester LE1 7RH, U.K.
A numerical model based on the variational principle is developed to model the kinetics and thermodynamics of microstructural evolution in multi-component systems under the influence of elastic stored energy variations. The driving force due to the elastic stored energy is implemented in a consistent manner such that it acts to reduce the global elastic strain energy. The model is used to look at the evolution of epitaxially strained InAs islands grown on a GaAs substrate in two simplified cases : for the situation where surface diffusion dominates and the island relaxes by changing its shape, and for the situation where lattice diffusion dominates and the island relaxes by changing its compositional profile.
© EDP Sciences 1999