J. Phys. IV France
Volume 09, Numéro PR8, September 1999Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
|Page(s)||Pr8-757 - Pr8-762|
J. Phys. IV France 09 (1999) Pr8-757-Pr8-762
Synthesis of polycrystalline silicon films on metalized ceramic substrates with laser-assisted chemical vapor depositionG. Korevaar, A. Goossens and J. Schoonman
Laboratory for Inorganic Chemistry, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands
In order to deposit polycrystalline silicon for photovoltaic solar cell application, a new low-temperature synthesis route is required. Towards this end, Laser-Assisted Chemical Vapor Deposition of polycrystalline silicon films on metalized ceramic substrates is investigated. A tunable continuous wave CO2-laser is used in a perpendicular configuration with the substrate. In this configuration, the substrate, the reactant gases, or both are heated by the CO2-laser. Two ceramic substrate materials, alumina (Al2O3) and cordierite (2 MgO + 2 Al2O3 + 5 SiO2), coated with tin are used. The presence of the metal layer is necessary for the formation of polycrystalline silicon grains at substrate temperatures below 700 °C. The film thickness is 10-50 µm and the growth rate 2 µm/min.
© EDP Sciences 1999