Carbon nitride films prepared by inductively coupled plasma chemical vapour deposition from a solid carbon source

C. Popov; M.F. Plass; W. Kulisch

doi:doi:10.1051/jp4:1999891

Numéro		J. Phys. IV France Volume 09, Numéro PR8, September 1999 Proceedings of the Twelfth European Conference on Chemical Vapour Deposition


Page(s)		Pr8-725 - Pr8-732
DOI		https://doi.org/10.1051/jp4:1999891

Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-725-Pr8-732
DOI: 10.1051/jp4:1999891

Carbon nitride films prepared by inductively coupled plasma chemical vapour deposition from a solid carbon source

C. Popov^{1, 2}, M.F. Plass¹ and W. Kulisch¹

¹ University of Kassel, Institute of Technical Physics, Heinrich-Plett Str. 40, 34109 Kassel, Germany
² Central Laboratory of Photoprocesses, Academician Jordan Malinowski, Bulgarian Academy of Sciences, Acad. Georgi Bontchev Str., Bl. 109, 1113 Sofia, Bulgaria

Abstract
Thin carbon nitride films have been prepared by inductively coupled plasma chemical vapour deposition (ICP-CVD). Instead of using conventional gaseous carbon precursors, a pure carbon mesh was used as a carbon source with nitrogen as a transport gas. The basic process parameters varied were the r.f. power (up to 100 W) and the pressure in the reactor. The films were composed of nitrogen and carbon as revealed by Auger electron spectroscopy (AES), X-ray excited photoelectron spectroscopy (XPS) and heavy ion elastic recoil detection (ERD) analysis, and their nitrogen fraction N/(N+C) was at about 0.5, independent on the experimental conditions. From Fourier transform infrared spectroscopy (FTIR) and XPS data it can be concluded that carbon atoms were bonded in different ways (by triple, double and single bonds) to nitrogen atoms.