Numéro
J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Page(s) Pr8-683 - Pr8-687
DOI https://doi.org/10.1051/jp4:1999886
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-683-Pr8-687

DOI: 10.1051/jp4:1999886

YSZ/CeO2/YBCO heterostructures grown in-situ by pulsed injection CVD

A. Abrutis

Vilnius University, Department of General and Inorganic Chemistry, Naugarduko 24, 2006 Vilnius, Lithuania


Abstract
A great improvement of YBCO film properties on YSZ substrates was obtained by a simple in-situ insertion of a thin CeO2 buffer layer between YSZ and YBCO. CeO2/YBCO hetreostructures on YSZ were deposited by a new pulsed injection CVD technique. The CeO2 buffer layer stopped Zr diffusion from the substrate into the film, improved the YBCO film epitaxy and increased Jc up to 4-5.106 A cm-2 at 77 K. The thickness of buffer layers in the range of 20-160 nm had but little influence on YBCO film properties.



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