J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Page(s) Pr8-651 - Pr8-657
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-651-Pr8-657

DOI: 10.1051/jp4:1999882

Chemical vapor deposition of tin oxide from SnEt4

N. Bertrand1, P. Duverneuil1, M. Amjoud2 and F. Maury3

1  LGC, UMR 5503 du CNRS, ENSIGC, 18 chemin de la Loge, 31078 Toulouse cedex 4, France
2  Université Cadi Ayyad, Département de Chimie, LCSM, BP. S/15, Marrakech, Maroc
3  ENSCT, CNRS/INPT, 118 route de Narbonne, 31077 Toulouse cedex 4, France

This paper deals with the deposition and characterization of SnO2 thin films, grown by the metalorganic chemical vapor deposition (MOCVD) technique in the temperature range of 320 - 470°C, using tetraethyltin (SnEt4) as precursor and oxygen as oxidant reagent. A kinetic study of the growth process has been carried out as a function of the deposition parameters and a simulation model of the growth rate was used to obtain rapidly thickness uniformity in a horizontal hot-wall CVD reactor. After deposition, the thin layers have been analyzed by various techniques to establish correlations between layers characteristics and growth conditions. The crystallographic structure and grain size were determinated by X-Ray Diffraction and Scanning Electron Microscopy. The electrical resistivity as a function of deposition temperature and precursor mole fraction is reported and discussed in correlation with the microstructure. Finally, optimal operating conditions have been determinated in order to obtain layers with high specific area.

© EDP Sciences 1999