J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Page(s) Pr8-529 - Pr8-536
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-529-Pr8-536

DOI: 10.1051/jp4:1999866

A PE-MOCVD route to V2O5 nanostructured thin films

D. Barreca1, G.A. Battiston2, F. Caccavalec3, V. di Noto1, R. Gerbasi2, A. Gregori4, G.A. Rizzi1, A. Tiziani4 and E. Tondello1

1  Dipartimento di Chimica Inorganica, Metallorganica ed Analitica, Centro di Studio sulla Stabilità e Reattività dei Composti di Coordinazione del CNR, Università di Padova, via Marzolo 1, 35131 Padova, Italy
2  Istituto di Chimica e Tecnologie Inorganiche dei Materiali Avanzati del CNR, corso Stati Uniti 4, 35127 Padova, Italy
3  INFM, Dipartimento di Fisica, Università di Padova, via Marzolo 8, 35131 Padova, Italy
4  DTG, Università di Padova, viale X. Giugno 22, 36100 Vicenza, Italy

Vanadium pentoxide thin films are grown on glass and borosilicate substrates by PACVD using a vanadyl (IV) β-diketonate as precursor. The depositions are carried out in an RF-plasma reactor with Ar-O2 mixtures and soft process conditions, obtaining high-purity nanocrystalline layers with a strong preferential orientation. The microstructural and morphological characteristics of the films, analyzed respectively by XRD and AFM, show that the sample features can be accurately tailored by an adequate choice of the synthesis conditions. The composition and purity of the films are studied by XPS and SIMS analyses. Impedance Spectroscopy is used to study the conductivity of the layers and the dependence of electrical properties on microstructure.

© EDP Sciences 1999