| Numéro |
J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | Pr8-501 - Pr8-508 | |
| DOI | https://doi.org/10.1051/jp4:1999863 | |
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
J. Phys. IV France 09 (1999) Pr8-501-Pr8-508
DOI: 10.1051/jp4:1999863
1 University of Chemical Technology and Metallurgy, Department of Semiconductors, 1756 Sofia, Bulgaria
2 Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria
3 Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria
© EDP Sciences 1999
J. Phys. IV France 09 (1999) Pr8-501-Pr8-508
DOI: 10.1051/jp4:1999863
Low pressure chemical vapour deposition of CNx layers by interaction between tetramethylguanidine and cyanurchloride
L. Zambov1, B. Ivanov1, G. Georgiev1, C. Popov2, V. Vassilev1 and G. Beshkov31 University of Chemical Technology and Metallurgy, Department of Semiconductors, 1756 Sofia, Bulgaria
2 Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria
3 Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria
Abstract
Possibilities are demonstrated for synthesis of CNx layers in a LPCVD reactor, using liquid and solid state source organic compounds. The influence of pressure and deposition temperature on the composition, structure and physico-chemical properties of the films is investigated. It is found that at a temperature range of 400
+600 °C, the layers obtained are transparent, colored on silicon, with good adhesion, homogeneous in morphology and uniform in thickness. Peculiar features of coatings are their amorphous nature, nitrogen to carbon relation 0.76 as well as possible hydrogen incorporation.
© EDP Sciences 1999