J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Page(s) Pr8-181 - Pr8-188
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-181-Pr8-188

DOI: 10.1051/jp4:1999822

Prediction of LPCVD silicon film microstructure from local operating conditions using numerical modeling

A. Dollet1, B. Caussat2 and J.P. Couderc2

1  Institut de Science et de Génie des Matériaux et Procédés, IMP, CNRS, BP. 5, Odeillo, 66125 Font-Romeu, France
2  Laboratoire de Génie Chimique, LGC, ENSIGC, 18 chemin de la Loge, 31078 Toulouse cedex 4, France

Numerical modeling of LPCVD silicon film microstructure was performed by means of two combined numerical codes. First, a a two-dimensional kinetic reactor model was used to calculate the conditions at the gas-substrate interface. Next, these conditions were used as imput parameters of a semi-empirical two-dimensional statistical model in order to predict the cristallized content of the deposits. This model also gave an image of the space distribution of crystallites inside the layer. A lot of experimental knowledge was required in order to develop a realistic aigorithm, accounting for the most important events. Most of the coefficients of the empirical laws were obtained by fitting the calculations to various experiments. Although the capabilities of our statistical model are yet limited, numerical simulations succeeded in predicting several microstructural features of LPCVD silicon films from operating conditions.

© EDP Sciences 1999