| Numéro |
J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | Pr8-1035 - Pr8-1039 | |
| DOI | https://doi.org/10.1051/jp4:19998129 | |
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
J. Phys. IV France 09 (1999) Pr8-1035-Pr8-1039
DOI: 10.1051/jp4:19998129
1 AIXTRON AG, Kackerstr. 15-17, 52072 Aachen, Germany
2 Institut fuer Halbleitertechnik, RWTH Aachen, Templergraben 55, 52056 Aachen, Germany
© EDP Sciences 1999
J. Phys. IV France 09 (1999) Pr8-1035-Pr8-1039
DOI: 10.1051/jp4:19998129
GaInN/GaN heterostructures grown in production scale MOVPE reactors
O. Schoen1, H. Protzmann1, O. Rockenfeller2, B. Schineller2, M. Heuken2 and H. Juergensen11 AIXTRON AG, Kackerstr. 15-17, 52072 Aachen, Germany
2 Institut fuer Halbleitertechnik, RWTH Aachen, Templergraben 55, 52056 Aachen, Germany
Abstract
Using production scale AIXTRON MOVPE reactors various heterostructures and quantum wells in the GaInN/GaN system have been studied. In an optimization from single quantum well structures to 10 period multi quantum well structures the photoluminescence emission intensity was increased by a factor of 18. MQW structures emitting at 490 nm were achieved by adjusting the growth parameters using an in situ reflectance system. Wafer to wafer uniformity PL peak wavelength of 2.1 nm (< 0.5%) and full wafer uniformity of 1.9 nm (0.4%) at 460 nm emission wavelength were demonstrated.
© EDP Sciences 1999