J. Phys. IV France
Volume 09, Numéro PR8, September 1999Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
|Page(s)||Pr8-1013 - Pr8-1020|
J. Phys. IV France 09 (1999) Pr8-1013-Pr8-1020
In-situ process monitoring of MOCVD of superconducting and dielectric oxide thin filmsS. Yamamoto, S. Sugai and S. Oda
O-Okayama, Meguro-Ku, Tokyo 152-8552, Japan
MOCVD is a promising method for preparation of high-quality thinfilms of superconducting and dielectric oxides. In order to improve the reproducibility of MOCVD process, we propose in situ monitoring of growth processes. An ultrasonic transducer is introduced to monitor and control the concentration of precursor gas supply rate. Spectroscopic ellipsometry is proved to be effective for realtime characterization of the quality of superconducting thinfilms.
© EDP Sciences 1999