J. Phys. IV France
Volume 09, Numéro PR8, September 1999Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
|Page(s)||Pr8-799 - Pr8-804|
J. Phys. IV France 09 (1999) Pr8-799-Pr8-804
Remote plasma metalorganic chemical vapor deposition of GaN epilayersM. Losurdo, P. Capezzuto and G. Bruno
Centro di Studio per la Chimica dei Plasma, CNR, via Orabona 4, 70126 Bari, Italy
The GaN growth has been investigated in a remote plasma MOCVD apparatus. Optical emission spectroscopy has been used to optimize the N-atoms production and to monitor the plasma/gas phase chemistry surrounding the substrate during GaN growth. Laser reflectance interferometry is used to measure in situ the growth rate and spectroscopic ellipsometry monitors the growing surface modifications. This multidiagnostic approach allows the correlation of the plasma/gas phase chemistry with the kinetics of the growth process.
© EDP Sciences 1999