Numéro
J. Phys. IV France
Volume 08, Numéro PR7, October 1998
3rd International Workshop Microwave Discharges : Fundamentals and Applications
Page(s) Pr7-173 - Pr7-185
DOI https://doi.org/10.1051/jp4:1998714
3rd International Workshop Microwave Discharges : Fundamentals and Applications

J. Phys. IV France 08 (1998) Pr7-173-Pr7-185

DOI: 10.1051/jp4:1998714

Recent trends in the design of large RF, microwave and ECR ion sources for the production of broad ion beams

L. Wartski, Ph. Coste, C. Schwebel, J. Aubert and C. Fusellier

Institut d'Électronique Fondamentale, URA 22, bâtiment 220, Université de Paris-Sud, 91405 Orsay, France


Abstract
Recently there have been considerable interest in the application of large RF, microwave and ECR ion sources for the production of monoenergetic ion beams of very large cross-section dedicated to specific surface treatments and modification of materials. We recall the recent trends and novel concepts in the design of these different classes of ion sources. Studies involving the production of singly charged, high density inert or reactive ion beams are described. Particular attention is given to the beam homogeneity and to the production of low energy ion beams. Different kinds of acceleration-deceleration systems including sets of parallel wires are presented and their respective figures of merit outlined. Optimization of the microwave power coupling to the plasma is presented in the case of circular or rectangular waveguides ionization chambers and circular vacuum tight windows which are the most vulnerable part of the ions source. As far as protection of the window against deposited films, backstreaming electron bombardment and overheating is concern, we describe the resonant slit in a metallic diagram located downstream the window. This simple component gives a very significant improvement of the microwave coupling and its lifetime.



© EDP Sciences 1998