J. Phys. IV France
Volume 08, Numéro PR3, June 1998Proceedings of the 3rd European Workshop on Low Temperature Electronics
|Page(s)||Pr3-155 - Pr3-159|
J. Phys. IV France 08 (1998) Pr3-155-Pr3-159
Cryogenic behavior of low-noise monolithic preamplifiers using a JFET as a front-end elementM. Citterio1 and P.F. Manfredi2
1 Brookhaven National Laboratory, Upton NY 11973, U.S.A.
2 Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley CA 94720, U.S.A.
The noise behavior of monolithic preamplifiers using JFETs as input elements has been investigated on a broad temperature range, from room temperature down to 77 K. The preamplifiers under study are charge integrators intended for use with radiation detectors. The parameter of dominant interest in the analysis is the equivalent noise charge (ENC). The investigation addresses two issues. One is the ENC dependence on temperature. The other one is the extent to which ENC is affected when the preamplifiers are irradiated in cryogenic conditions.
© EDP Sciences 1998