| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-155 - Pr3-159 | |
| DOI | https://doi.org/10.1051/jp4:1998334 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-155-Pr3-159
DOI: 10.1051/jp4:1998334
1 Brookhaven National Laboratory, Upton NY 11973, U.S.A.
2 Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley CA 94720, U.S.A.
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-155-Pr3-159
DOI: 10.1051/jp4:1998334
Cryogenic behavior of low-noise monolithic preamplifiers using a JFET as a front-end element
M. Citterio1 and P.F. Manfredi21 Brookhaven National Laboratory, Upton NY 11973, U.S.A.
2 Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley CA 94720, U.S.A.
Abstract
The noise behavior of monolithic preamplifiers using JFETs as input elements has been investigated on a broad temperature range, from room temperature down to 77 K. The preamplifiers under study are charge integrators intended for use with radiation detectors. The parameter of dominant interest in the analysis is the equivalent noise charge (ENC). The investigation addresses two issues. One is the ENC dependence on temperature. The other one is the extent to which ENC is affected when the preamplifiers are irradiated in cryogenic conditions.
© EDP Sciences 1998