Numéro
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
Page(s) Pr3-91 - Pr3-94
DOI https://doi.org/10.1051/jp4:1998321
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3

J. Phys. IV France 08 (1998) Pr3-91-Pr3-94

DOI: 10.1051/jp4:1998321

Implications of dopant-dependent low-field mobility and band gap narrowing on the bipolar device performance

V. Palankovski, G. Kaiblinger-Grujin and S. Selberherr

Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, 1040 Vienna, Austria


Abstract
Band gap narrowing is one of the crucial heavy-doping effects to be considered for bipolar devices. We present a new band gap narrowing model which considers the semiconductor material and the dopant species for arbitrary finite temperatures. As the minority carrier mobility is of considerable importance for modeling advanced n-p-n bipolar transistors, we implemented the new universal low field mobility model [l] in MINIMOS-NT [2]. This model distinguishes between majority and minority electron mobilities on one hand, and between different dopant species on the other hand, both as a function of temperature and dopant concentration. This unified treatment is especially useful for accurate device simulation. As a particular example we present the results for SiGe HBT



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