Analysis of the substrate effect on enhancement-mode SOI nMOSFET effective channel length and series resistance extraction at 77 K

M.A. Pavanello; A.S. Nicolett; J.A. Martino

doi:doi:10.1051/jp4:1998312

Numéro		J. Phys. IV France Volume 08, Numéro PR3, June 1998 Proceedings of the 3^rd European Workshop on Low Temperature Electronics WOLTE 3


Page(s)		Pr3-49 - Pr3-52
DOI		https://doi.org/10.1051/jp4:1998312

Proceedings of the 3^rd European Workshop on Low Temperature Electronics
WOLTE 3

J. Phys. IV France 08 (1998) Pr3-49-Pr3-52
DOI: 10.1051/jp4:1998312

Analysis of the substrate effect on enhancement-mode SOI nMOSFET effective channel length and series resistance extraction at 77 K

M.A. Pavanello¹, A.S. Nicolett² and J.A. Martino¹

¹ LSI, Laboratório de Sistemas Integráveis, Escola Politécnica da Universidade de São Paulo, Av. Prof. Luciano Gualberto, Trav. 3 No. 158, CEP 05508-900 São Paulo, Brazil
² FATEC, Faculdade de Tecnologia de São Paulo, São Paulo, Brazil

Abstract
In this work is presented an analysis of the substrate influences on the effective channel length and series resistance extraction method in fully depleted enhancement-mode Silicon-On-Insulator (SOI) nMOSFETs operating at nitrogen temperature. This analysis was supported by a comparison between the results obtained by MEDICI numerical bidimensional simulations results and by analytical expressions solution. The effective channel length extraction method is significantly influenced by the substrate potential drop. However, the substrate influence on the series resistance extraction method can be considered negligible in all studied conditions.