| Numéro |
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
|
|
|---|---|---|
| Page(s) | C2-749 - C2-751 | |
| DOI | https://doi.org/10.1051/jp4:1997225 | |
J. Phys. IV France 7 (1997) C2-749-C2-751
DOI: 10.1051/jp4:1997225
DAFS Study of Strained III-V Epitaxial Semiconductors
M.G. Proietti1, H. Renevier2, J.F. Berar2, V. Dalakas2, J.L. Hodeau2, G. Armelles3 and J. García11 Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza, pza. S. Francisco s.n., 50009 Zaragoza, Spain
2 CNRS-UJF, Laboratoire de Cristallographie, 38042 Grenoble cedex, France
3 Instituto de Microelectrónica de Madrid, CSIC, Serrano 144, 28006 Madrid, Spain
Abstract
The effect of built-in strain on III-V epitaxial semiconductors has been investigated by Diffraction Anomalous Fine Stmcture (DAFS). We study two different systems in a different strain regime : a Strained Layer Superlattice of (GaP)2(InP)3 grown on a GaAs(001) substrate, and a single epilayer of GaAs1-xPx, (x=0.225), also grown on a GaAs (001) substrate. In the first case the strain is accommodated by plastic deformation of the lattice, while in the second one it is partially relaxed by dislocations generation. The bond distances for the Ga-P and Ga-As pairs are obtained showing how they are affected by strain. The Ga-As pair shows to be "softer" than the Ga-P pair, i.e. more available io accommodate strain by bond deformation, in good agreement with previous results obtained by different techniques. The DAFS provide a unique tool of studing systems that are out of the reach of the other X-ray techniques.
© EDP Sciences 1997