J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
Page(s) C2-561 - C2-564
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure

J. Phys. IV France 7 (1997) C2-561-C2-564

DOI: 10.1051/jp4/1997096

An lntegrated Growth and Analysis System for In-Situ XAS Studies of Metal- Semiconductor Interactions

Z. Wang, P. T. Goeller, B. I. Boyanov, D. E. Sayers and R. J. Nemanich

North Carolina State University, Department of Physics and Department of Materials Science and Engineering, Raleigh, NC 27695-8202, U.S.A.

A UHV system for in-situ studies of metal-semiconductor interactions has been designed and assembled at North Carolina State University and recently installed and tested at the NSLS. The UHV system consists of interconnected deposition and analysis chambers, each of which is capable of maintaining a base pressure of approximately 1 x 10-10 Torr. Up to three materials can be co-deposited on 25 mm wafers by electron-beam evaporation. Substrate temperature can be controlled in the range 30-900 °C during deposition, and the growth process may be monitored with RHEED. The deposited materials and their reaction products can be studied in-situ with a variety of technique: XAFS, AES, XPS, UPS and ARXPS/UPS. We describe the capabilities of the system and present our first EXAFS results on the stabilization of Co + 2 Si films co-deposited on Si0.8Ge0.2 alloys. Preliminary results indicate that Co + 2Si forms a stable film on Si0.8Ge0.2 with a "CoSi2-like" reaction path. As is tie case with Co/Si0.8Ge0.2, silicide formation is complete at 700 °C. However, the Co+2Si/0.8Ge0.2 system does not undergo a CoSi→ CoSi2 transition when annealed at 500-700 °C, and exhibits only weak CoSi features in this.temperature range.

© EDP Sciences 1997