| Numéro |
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
|
|
|---|---|---|
| Page(s) | C2-553 - C2-555 | |
| DOI | https://doi.org/10.1051/jp4/1997094 | |
J. Phys. IV France 7 (1997) C2-553-C2-555
DOI: 10.1051/jp4/1997094
XEOL Studies of Porous Silicon
D. A. Hill1, R. F. Pettifer1, S. Gardeiis2, B. Hamilton2, A. D. Smith3 and D. Teehan31 Physics Department, University of Warwick, Coventry CV4 7AL, UK
2 Physics Department, UMIST, Sackville Street, Manchester M60 2QD, UK
3 CCLRC, Daresbury Laboratory, Warrington WA4 4AD, UK
Abstract
Oxidised porous silicon emits fuminescence in two distinct bands in the visible region. The fast blue (τ ~ ns) and slow red (τ ~ μs at 300K) bands are studied via the separate methods of time-resolved XEOL in single-bunch
mode and wavelength-selective and total XEOL in multi-bunch mode. Measurements have been conducted at the
silicon K-edge (1840eV) and L2,3-edge for freshly prepared and oxidised porous silicon and related samples. Both
methods give conclusive evidence that the fast, blue luminescent site is defects in silica or suboxide formed near to
the Si/ SiO2 interface, whereas the slower, red band originates from smaller silicon particles of diameter 14Å or less
found in porous silicon. The XEOL process is discussed and range estimates of the spatial separation between the
photoionisation event and radiative recombination are made.
© EDP Sciences 1997