Numéro
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
Page(s) C2-1159 - C2-1160
DOI https://doi.org/10.1051/jp4:19972172
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure

J. Phys. IV France 7 (1997) C2-1159-C2-1160

DOI: 10.1051/jp4:19972172

Off-Centering of Pb and Sn Impurities in GeTe Induced by Strong Local Stress

A.I. Lebedev1, I.A. Sluchinskaya1, V.N. Demin1 and I.H. Munro2

1  Physics Department, Moscow State University, Moscow, 119899, Russia
2  CCLRC, Daresbury Laboratory, Warrington, WA4 4AD, UK


Abstract
The local environment of large Pb and Sn substitutional impurities in GeTe was found to be strongly distorted compared to that in binary PbTe and SnTe compounds. For both impurities the neighboring Te atoms were found at two different distances, the shortest of them being by 0.16-0.17 Å less than that in corresponding binary compound. The off-centering of Pb and Sn impurities is explained by participation of their 6s2 and 5s2 unshared electron pairs in chemical bonding in the condition of strong local stress created by these impurities in the lattice.



© EDP Sciences 1997