| Numéro |
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
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|---|---|---|
| Page(s) | C2-1131 - C2-1132 | |
| DOI | https://doi.org/10.1051/jp4:19972158 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-1131-C2-1132
DOI: 10.1051/jp4:19972158
1 Department of Chemistry, University of Western Ontario, London, N6A 5B7, Canada
2 National Research Council of Canada, Institute for Microstructural Science, Ottawa, K1A 0R6, Canada
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-1131-C2-1132
DOI: 10.1051/jp4:19972158
XAFS Studies of Self-Aligned Platinum Silicide Thin Films at the Pt M3,2 Edge and the Si K-Edge
S.J. Naftel1, A. Bzowski1, T.K. Sham1, D.-X. Xu2 and S.R. Das21 Department of Chemistry, University of Western Ontario, London, N6A 5B7, Canada
2 National Research Council of Canada, Institute for Microstructural Science, Ottawa, K1A 0R6, Canada
Abstract
Pt-Si thin films with the thickness of several hundred Å prepared on n-type Si(100) by UHV sputter-deposition procedures and subsequent annealing have been studied with X-ray absorption fine structure spectroscopy at the Pt M3,2 edge and the Si K-edge. It is found that, under favourable conditions, single phase PtSi films can be obtained. These films exhibit the same XAFS characteristics as those of bulk samples. The M3,2 edge exhibits XANES features very similar to those of the Pt L3,2 edge obtained from the samples. The analysis of the Pt M3,2 edge whiteline and the Si K-edge results show significant charge redistribution at both Pt and Si sites upon silicidation.
© EDP Sciences 1997