Resonance Effects on the Auger Spectra of Silicon in Porous Silicon

Abstract
Auger spectra of pure silicon, in-situ oxidized silicon and porous silicon have been recorded at different photon energies across the K absorption edge of silicon and silica. The results show an intense resonant effect with, between the normal Auger lines of pure silicon and silica, a new contribution whose intensity and energy position depends on the incident photon energy. We discuss these results.