| Numéro |
J. Phys. IV France
Volume 07, Numéro C1, Mars 1997
7th INTERNATIONAL CONFERENCE ON FERRITES
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|---|---|---|
| Page(s) | C1-735 - C1-738 | |
| DOI | https://doi.org/10.1051/jp4:19971300 | |
7th INTERNATIONAL CONFERENCE ON FERRITES
J. Phys. IV France 07 (1997) C1-735-C1-738
DOI: 10.1051/jp4:19971300
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152, Japan
© EDP Sciences 1997
J. Phys. IV France 07 (1997) C1-735-C1-738
DOI: 10.1051/jp4:19971300
Sputter Deposition of Ferrite Films and Application for High Density Rigid Disk Media in Contact Mode
M. Naoe, N. Matsushita, K. Noma and S. NakagawaDepartment of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152, Japan
Abstract
Co-Zn ferrite and BaM ferrite films were deposited on silicon wafer disks with thermally oxidized surface layer without annealing process, and their read/write characteristics in contact mode have been investigated by using a MIG and Mn-Zn ferrite head with gap length of 0.2-0.4 µm. The highest linear recording density D50 of Co-Zn ferrite and Ba ferrite films were 105 and 190 kFRPI, respectively. Clear dipulse was observed for isolated wave form of Ba ferrite disks and then dipulse ratio was 0.65. It was concluded that the Co-Zn ferrite films and Ba ferrite films have high potential as an isotropic and a perpendicular recording layer, respectively, in contact recording mode at ultra-high density.
© EDP Sciences 1997