J. Phys. IV France
Volume 07, Numéro C1, Mars 19977th INTERNATIONAL CONFERENCE ON FERRITES
|Page(s)||C1-481 - C1-482|
J. Phys. IV France 07 (1997) C1-481-C1-482
Epitaxial Growth of α-Fe2O3 and Cr2O3 Sputtered Films on GarnetM. Gomi, H. Toyoshima and T. Yamada
Department of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-12, Japan
Thin films of α-Fe2O3 and Cr2O3 have been prepared in situ on gadolinium gallium garnet (GGG) (111) substrates by rf sputtering. The α-Fe2O3 film showed a strong  texture normal to the film plane at 500°C when deposited on an initial layer with 7 - 10 nm thick grown at ambient temperature, while the Cr2O3 films with a  texture grew in pure Ar without the initial layer. X-ray pole figure analysis showed that nearly single crystalline (0001) films of α-Fe2O3 and Cr2O3 were grown on GGG (111) with an in-plane alignment of [2-1-10] parallel to GGG [1-10]. Thus, these films with the corundum crystal structure may be a promising buffer layer for achieving heteroepitaxy of various ferrite thin films onto a common substrate of GGG.
© EDP Sciences 1997