Numéro |
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics |
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Page(s) | C3-315 - C3-320 | |
DOI | https://doi.org/10.1051/jp4:1996348 |
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-315-C3-320
DOI: 10.1051/jp4:1996348
Statistical Studies of the Anisotropy of the Pinning Mechanism in YBaCuO Films Deposited on Polycrystalline YSZ Substrates
O. Sarrhini, J. Baixeras and A. KreislerLaboratoire de Génie Électrique des Universités Paris 6 et Paris 11, URA 127 CNRS, SUPÉLEC, Plateau de Moulon, 91192 Gif sur Yvette Cedex, France
Abstract
We have studied the I-V characteristics and the behaviour of the critical current density of YBa2Cu3O7-x films, prepared by sputtering, at different values of applied magnetic field and of temperature. The superconductor was deposited onto polycrystalline ZrO2 (8 mol % Y2O3). The I-V characteristics were obtained by using a short current pulse measurement technique in order to avoid heating phenomena. We have used a theoretical model to describe the I-V characteristics, based on a statistical treatment of the motion of vortices in an arbitrary pinning potential. Besides the determination of the critical current density Jc, this model allows to characterise the pinning sites by a function giving their energetic distribution. In this way we have been able to make a clear distinction between intrinsic and extrinsic pinning in sputtered YBa2Cu3O7-xfilms.
© EDP Sciences 1996