Numéro
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
Page(s) C3-213 - C3-218
DOI https://doi.org/10.1051/jp4:1996332
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics

J. Phys. IV France 06 (1996) C3-213-C3-218

DOI: 10.1051/jp4:1996332

A 4.2 K Very High-Gain/Modulation Factor Silicon Detector/Modulator

E.A. Gutierrez-D.1, S.V. Koshevaya2, P. Kolev1 and J. Deen1

1  Contact author : On leave from INAOE, and currently at Simon Fraser University, School of Engineering Science, Burnaby, B.C., V5A 1S6, Canada
2  National Institute for Astrophysics, Optics and Electronics (INAOE), P.O. Box 51 & 216, Z.P. 72000, Puebla, Mexico


Abstract
An n-well ion-implanted resistor is shown to work as a very-linear high-gain photodetector at 4.2 K. We take advantage of freeze-out and light-assisted carrier ionisation effects to create a photodetector with a current-gain factor G from 1x104 to 1.6x106. Experimental results show that at the current gain of 1.6X106, excellent linearity in optical response is obtained when the resistor is illuminated with a red-light source.



© EDP Sciences 1996