Numéro
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
Page(s) C3-157 - C3-161
DOI https://doi.org/10.1051/jp4:1996324
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics

J. Phys. IV France 06 (1996) C3-157-C3-161

DOI: 10.1051/jp4:1996324

Comparison Studies of Infrared Phototransistors with a Quantum-Well and a Quantum-Wire Base

V. Ryzhii, I. Khmyrova, M. Ryzhii and M. Ershov

Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu City, 965-80, Japan


Abstract
Infrared phototransistors based respectively on a quantum-well and a quantum-wire structures, utilizing intersubband electron transitions, are considered using developed analytical model. The dark currents and responsivities of the phototransistors in question are compared. It is shown that the quantum-wire infrared phototransistor can surpass the infrared phototransistor with a quantum well in performance especially at low temperatures. This is due to the one-dimensional nature of the electrons in the quantum-wires providing higher energy of thermal excitation, leading to low dark current and sensitivity to normal incident radiation.



© EDP Sciences 1996