Numéro
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
Page(s) C3-119 - C3-124
DOI https://doi.org/10.1051/jp4:1996318
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics

J. Phys. IV France 06 (1996) C3-119-C3-124

DOI: 10.1051/jp4:1996318

Effect of Transistor Geometry on the Electrical Characteristics of Si1-xGex Heterojunction Bipolar Transistors at Low Temperatures

M.D.R. Hashim, R.F. Lever, P. Ashburn and G.J. Parker

Department of Electronics and Computer Science, University of Southampton, Southampton S017 1BJ, U.K.


Abstract
This paper investigates the effect of using an extrinsic implant on the behaviour of SiGe HBTs at low temperatures. The collector current characteristics of SiGe HBTs with different geometries are measured at temperatures from 77 to 300K. The temperature dependence of the collector current is different for devices with different geometries and this results from base profile broadening in the vicinity of the extrinsic base implant due to point defects. Process and device simulators are used to explain this effect. A method for eliminating this geometry dependence of the collector current is also described.



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