Anomalous Behaviour of the Electric Field in Highly-Compensated Non-Uniform Semiconductors at Low Temperatures

J.A. Jiménez-Tejada; A. Palma; A. Godoy; J.E. Carceller

doi:doi:10.1051/jp4:1996315

Numéro		J. Phys. IV France Volume 06, Numéro C3, Avril 1996 WOLTE 2 Proceedings of the Second European Workshop on Low Temperature Electronics


Page(s)		C3-99 - C3-103
DOI		https://doi.org/10.1051/jp4:1996315

WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics

J. Phys. IV France 06 (1996) C3-99-C3-103
DOI: 10.1051/jp4:1996315

Anomalous Behaviour of the Electric Field in Highly-Compensated Non-Uniform Semiconductors at Low Temperatures

J.A. Jiménez-Tejada, A. Palma, A. Godoy and J.E. Carceller

Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain

Abstract
The electric field and net charge density are simulated in a semiconductor structure with deep centers and a non-uniform dopant profile. Different regions of the electric field and net charge density are found in the device. The analysis of the distribution of these variables allows measurements devoted to the characterization of deep impurities at low temperatures to be interpreted.