| Numéro |
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C3-93 - C3-98 | |
| DOI | https://doi.org/10.1051/jp4:1996314 | |
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-93-C3-98
DOI: 10.1051/jp4:1996314
1 Department of Electrical Engineering, Division of Electroscience, NTUA, Heroon Polytechniou 9, Zografou, 15773 Athens, Greece
2 Institute of Microelectronics NCSR "Democritos ", 15310 Aghia Paraskevi, Athens, Greece
© EDP Sciences 1996
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-93-C3-98
DOI: 10.1051/jp4:1996314
Static Current-Voltage Characteristics of Silicon n+-i-n+ Resistors at Liquid Helium Temperatures
D. Tsamakis1 and N. Glezos21 Department of Electrical Engineering, Division of Electroscience, NTUA, Heroon Polytechniou 9, Zografou, 15773 Athens, Greece
2 Institute of Microelectronics NCSR "Democritos ", 15310 Aghia Paraskevi, Athens, Greece
Abstract
The behaviour of the (I-V) characteristics is investigated in n+-i-n+ highly compensated Si resistors at temperatures 4.2-45K. The conduction mechanisms are discussed in detail here. The prebreakdown and breakdown regions of I-V characteristics were simulated by a one-dimensional model including the evidence of impurity high compensation and freeze out effects as well as the shallow-dopants impact ionisation by the injected hot carriers into the base. Negative resistance (S-type) phenomena are also observed on the characteristics for high injection current densities.
© EDP Sciences 1996