| Numéro |
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C3-81 - C3-86 | |
| DOI | https://doi.org/10.1051/jp4:1996312 | |
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-81-C3-86
DOI: 10.1051/jp4:1996312
1 All-Rusian Electrotechnical Institute, Krasnokazarmennaya str. 12, 111250 Moscow, Russia
2 A.F. Ioffe Physico-Technical Institute, Politechnicheskaya str. 26, 194021 St.-Petersburg, Russia
© EDP Sciences 1996
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-81-C3-86
DOI: 10.1051/jp4:1996312
Study on Feasibility of Minority Carrier Complete Drag in Silicon. New Investigation Method Intended for Indirect-Gap Semiconductors
T.T. Mnatsakanov1, L.I. Pomortseva1 and V.B. Shuman21 All-Rusian Electrotechnical Institute, Krasnokazarmennaya str. 12, 111250 Moscow, Russia
2 A.F. Ioffe Physico-Technical Institute, Politechnicheskaya str. 26, 194021 St.-Petersburg, Russia
Abstract
A method is proposed for determining the electron - hole scattering parameters in indirect gap semiconductors when the carrier injection level is low. The proposed method is used to study the electron - hole scattering in silicon. The results are evidence that minority carrier complete drag by majority-electrons is possible in n-type material at a doping level of Nd > 1017cm-3 even at room temperatures.
© EDP Sciences 1996