Numéro
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
Page(s) C3-29 - C3-42
DOI https://doi.org/10.1051/jp4:1996305
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics

J. Phys. IV France 06 (1996) C3-29-C3-42

DOI: 10.1051/jp4:1996305

Parameter Extraction of MOSFETs Operated at Low Temperature

E. Simoen1, C. Claeys1 and J.A. Martino2

1  IMEC, Kapeldreef 75, 3001 Leuven, Belgium
2  LSI/PEE/USP, São Paulo, Brazil


Abstract
In this paper, an overview is given of the methods for practical parameter extraction for MOSFETs operated at cryogenic temperatures. The methods considered are based on the input characteristics of the device, from which the charge threshold voltage, the subthreshold slope, the effective mobility, the series resistance and the effective gate length is derived. Whenever possible, the physical basis of the mostly semi-empirical methods will be outlined. Finally, pitfalls and problems, related to low temperature MOSFET characterisation, like transient and freeze-out effects, self-heating, etc, are briefly discussed.



© EDP Sciences 1996