Sputter Deposition of High Transition Temperature Ti-Ni-Hf Alloy Thin Films

TiNi Alloy Company, Shape Memory Alloys Application, 1621 Neptune Drive, San Leandro, CA 94577, U.S.A.

Abstract

Using conventional DC magnetron sputtering-deposition processes, films of 2-5 μm thick were deposited on silicon wafers from a 40at.%Ti-50at.%Ni-10at.%Hf target having an M_s point of ~ 120 °C. It was found that the transformation start temperature of deposited thin films can be adjusted in a temperature range from 100 °C to 200 °C by placing additional Ti or Hf pieces on the target's surface.