J. Phys. IV France
Volume 05, Numéro C5, Juin 1995Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|Page(s)||C5-785 - C5-792|
J. Phys. IV France 05 (1995) C5-785-C5-792
Chemical Vapour Deposition of AIN-Si3N4 CodepositsF. Henry, B. Armas, C. Combescure, D. Thenegal and R. Flamand
Institut de Science et de Génie des Matériaux et Procédés, CNRS-IMP, BP. 5, Odeillo, 66125 Font Romeu cedex, France
A hot wall CVD reactor has been especially adapted to the problem of producing codeposits of aluminium and silicon nitrides. The experimental set-up for preparing "in situ" aluminium trichloride or a mixture of AlCl3 and SiCl4 by the action of silicon tetrachloride on an aluminium supply, heated to temperatures (Tc) between 380 and 520 °C is presented. A study was also made of the deposition kinetics using a thermobalance with a continuous recording facility. The deposition kinetics of AIN and Si3N4 were measured and compared. The codeposits prepared at a temperature of 1200 °C and a total pressure of 1 Torr were found to be adherent when deposited on a graphite substrate covered by a layer of silicon carbide obtained by pyrolysis of tetramethylsilane at 1240 °C. The deposits were characterized by a variety of methods : X-ray diffraction, wavelength dispersive spectroscopy and scanning electron microscopy.
© EDP Sciences 1995