J. Phys. IV France
Volume 05, Numéro C5, Juin 1995Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|Page(s)||C5-711 - C5-715|
J. Phys. IV France 05 (1995) C5-711-C5-715
Low Temperature Plasma Enhanced CVD Synthesis of Piezoactive ZnO FilmsT.V. Tabenskaya, V.P. Ovsyannikov and E.A. Mazurenko
Institute of General and Inorganic Chemistry of National Academy of Sciences of Ukraine, 32/34 Palladina prosp., Kiev-142, UA-252142, Ukraine
Plasma-enhanced organometallic chemical vapour deposition process has been developed to obtain piezoelectric ZnO films with a highly preferred orientation of the crystallites on sapphire and on SiO2/Si substrates. The volatile organic precursor of zinc acetylacetonate Zn(AA)2 decomposes under r.f. discharge plasma at low temperature in controlled atmosphere of Ar+O2 gas mixture. The optimal deposition conditions of high quality ZnO film were deduced and investigated. The films obtained have high resistivity and transparency.
© EDP Sciences 1995