| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | C5-711 - C5-715 | |
| DOI | https://doi.org/10.1051/jphyscol:1995586 | |
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
J. Phys. IV France 05 (1995) C5-711-C5-715
DOI: 10.1051/jphyscol:1995586
Institute of General and Inorganic Chemistry of National Academy of Sciences of Ukraine, 32/34 Palladina prosp., Kiev-142, UA-252142, Ukraine
© EDP Sciences 1995
J. Phys. IV France 05 (1995) C5-711-C5-715
DOI: 10.1051/jphyscol:1995586
Low Temperature Plasma Enhanced CVD Synthesis of Piezoactive ZnO Films
T.V. Tabenskaya, V.P. Ovsyannikov and E.A. MazurenkoInstitute of General and Inorganic Chemistry of National Academy of Sciences of Ukraine, 32/34 Palladina prosp., Kiev-142, UA-252142, Ukraine
Abstract
Plasma-enhanced organometallic chemical vapour deposition process has been developed to obtain piezoelectric ZnO films with a highly preferred orientation of the crystallites on sapphire and on SiO2/Si substrates. The volatile organic precursor of zinc acetylacetonate Zn(AA)2 decomposes under r.f. discharge plasma at low temperature in controlled atmosphere of Ar+O2 gas mixture. The optimal deposition conditions of high quality ZnO film were deduced and investigated. The films obtained have high resistivity and transparency.
© EDP Sciences 1995