| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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| Page(s) | C5-705 - C5-709 | |
| DOI | https://doi.org/10.1051/jphyscol:1995585 | |
J. Phys. IV France 05 (1995) C5-705-C5-709
DOI: 10.1051/jphyscol:1995585
PE MOCVD of Thin High Transparent Dielectric Amorphous Films of Aluminium Oxide
V.P. Ovsyannikov1, G.V. Lashkaryov1 and E.A. Mazurenko21 Institute for Problems of Material Sciences of National Academy of Sciences of Ukraine, 3 Krzhizhanovskogo str., Kiev-180, UA-252180, Ukraine
2 Institute of General and Inorganic Chemistry of National Academy of Sciences of Ukraine, 32/34 Palladina prosp., Kiev-142, UA-252142, Ukraine
Abstract
Thin transparent amorphous films of aluminum oxide have been obtained using PE MOCVD technique and aluminum β-diketonate as precursor in controlled mixture of gas reagents Ar and O2. The films were deposited on glass, quartz and stainless steel substrates at temperature range of 100 -- 250°C. The correlation between electric properties and such deposition parameters as r.f. power Wp, the total gas pressure in chamber P0, O2 partial pressure, the substrate temperature TS and gas carrier flow rate were determined. Optimal deposition conditions of Al2O3 layers with high dielectric characteristics were established. Auger analysis showed that the composition of films obtained was stoichiometric. Auger depth profiles showed the existence of the transition area enriched with oxygen in the film/substrate heterostructure.
© EDP Sciences 1995