J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
Page(s) C5-533 - C5-540
Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-533-C5-540

DOI: 10.1051/jphyscol:1995562

Properties of Thin Epitaxial Aerosol MOCVD CeO2 Films Grown on (1102) Sapphire

K. Fröhlich1, J. Souc1, D. Machajdík1, A.P. Kobzev2, F. Weiss3, J.P. Senateur3 and K.H. Dahmen4

1  Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 842 39 Bratislava, Slovakia
2  Frank Laboratory of Neutron Physics, JINR Dubna, Head P.O. Box 79, Moscow, Russia
3  Laboratoire des Matériaux et du Génie Physique, ENSPG, URA 1109 du CNRS, BP. 46, 38402 Saint Martin d'Hères, France
4  Laboratorium für Anorganische Chemie, ETH Zentrum, 8092 Zürich, Switzerland

We have examined the properties of thin epitaxial CeO2 films prepared by aerosol MOCVD. The films were deposited on (1-102) sapphire at deposition temperatures between 500 °C and 900 °C. The best properties were observed for the film grown at high deposition temperatures. The films have thickness ≈ 0.2 µm and the full width at half maximum of the rocking curve 0.3 ° - 0.4 °. The minimal yield measured by backscattering spectrometry in the channeling mode was 5.5 %, confirming high preferred orientation of the deposited films. The epitaxial character of the CeO2 films was revealed by the measurement of the φ-scan. The aerosol MOCVD CeO2 films were found to be suitable as a buffer layer for a preparation of superconducting high-Tc films. YBa2Cu3O7 superconducting films deposited on the CeO2 / (1-102) sapphire exhibit superconducting transition temperature Tc(R=0) = 86 K.

© EDP Sciences 1995