Numéro
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
Page(s) C5-245 - C5-252
DOI https://doi.org/10.1051/jphyscol:1995528
Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-245-C5-252

DOI: 10.1051/jphyscol:1995528

Modelling of Precursor Flow and Deposition in Atomic Layer Deposition Reactor

H. Siimon and J. Aarik

University of Tartu, Institute of Experimental Physics and Technology, Ülikooli 18, EE2400 Tartu, Estonia


Abstract
A calculation model to study atomic layer deposition (ALD) in low-pressure channel-type CVD reactor with many parallel substrates is described. The calculations are based on continuity equation and kinetic equation for surface coverage. Formation of a steady-state adsorption wave propagating between the substrates during a precursor pulge is studied. The effect of diffusion and sticking coefficients, carrier gas flow rate and growth temperature on formation and propagation of the steady-state adsorption wave is analysed.



© EDP Sciences 1995