J. Phys. IV France
Volume 05, Numéro C5, Juin 1995Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|Page(s)||C5-245 - C5-252|
J. Phys. IV France 05 (1995) C5-245-C5-252
Modelling of Precursor Flow and Deposition in Atomic Layer Deposition ReactorH. Siimon and J. Aarik
University of Tartu, Institute of Experimental Physics and Technology, Ülikooli 18, EE2400 Tartu, Estonia
A calculation model to study atomic layer deposition (ALD) in low-pressure channel-type CVD reactor with many parallel substrates is described. The calculations are based on continuity equation and kinetic equation for surface coverage. Formation of a steady-state adsorption wave propagating between the substrates during a precursor pulge is studied. The effect of diffusion and sticking coefficients, carrier gas flow rate and growth temperature on formation and propagation of the steady-state adsorption wave is analysed.
© EDP Sciences 1995