J. Phys. IV France
Volume 05, Numéro C5, Juin 1995Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|Page(s)||C5-229 - C5-234|
J. Phys. IV France 05 (1995) C5-229-C5-234
Deposition Kinetics of CVD-Silicon Carbonitride CoatingsA.G. Varliamov and S.V. Afanas'eva
Institute for Structural Macrokinetics RAS, Chernogolovka, 142432 Moscow Region, Russia
In the present work some conformities of atmospheric CVD-process with silicon carbonitride layers synthesis as an example are discussed. It is proposed the chemisorption - kinetic mechanism of the coatings heterogeneous synthesis. The possibility of this mechanism existence is conditioned by the limited adsorptive capacity of the growing surface and by defining the surface processes as the leading (limiting) stage of the CVD-synthesis. The effect of " the chemisorptive surface memory " is discovered. The idea of it is as follows : after a sharp changing of CVD- synthesis temperature the surface keeps the information about the blocked centers number at its previous state.
© EDP Sciences 1995