| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | C5-1079 - C5-1086 | |
| DOI | https://doi.org/10.1051/jphyscol:19955127 | |
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
J. Phys. IV France 05 (1995) C5-1079-C5-1086
DOI: 10.1051/jphyscol:19955127
1 Laboratoire des Matériaux et du Génie Physique, INPG, URA 1109 du CNRS, ENS de Physique de Grenoble, BP. 46, 38402 Saint Martin d'Hères cedex, France
2 Department of General and Inorganic Chemistry, Faculty of Chemistry, Vilnius University, 2734 Vilnius, Lithuania
© EDP Sciences 1995
J. Phys. IV France 05 (1995) C5-1079-C5-1086
DOI: 10.1051/jphyscol:19955127
Deposition of Oxide Layers by Computer Controlled"Injection-LPCVD"
F. Felten1, J.P. Senateur1, F. Weiss1, R. Madar1 and A. Abrutis21 Laboratoire des Matériaux et du Génie Physique, INPG, URA 1109 du CNRS, ENS de Physique de Grenoble, BP. 46, 38402 Saint Martin d'Hères cedex, France
2 Department of General and Inorganic Chemistry, Faculty of Chemistry, Vilnius University, 2734 Vilnius, Lithuania
Abstract
A new process for stable generation of precursor's vapour pressure for CVD thin layers synthesis is experimented. The vapour pressure is controlled by sequential computer-driven injection of precise micro amounts of liquid in an evaporator, where flash volatilization occurs. During deposition, the precursors are maintained at room temperature under inert gases in an hermetically closed vessel : even thermally unstable precursors may be used. The results reported here are focused on the OMCVD deposition of Ta2O5. The growth rate increases up to 11µm/h at 650°C (amorphous layers), and decreases above (crystallized layers). In a second part, we demonstrate the feasibility of Ta2O5/SiO2 multilayers using two injectors.
© EDP Sciences 1995