J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
Page(s) C5-1045 - C5-1052
Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-1045-C5-1052

DOI: 10.1051/jphyscol:19955123

Evolution of Magnetomechanical and Magnetic Properties of Siliconized Iron-Silicon Alloys by CVD Process Using SiCl4

S. Crottier-Combe1, S. Audisio1, J. Degauque2, C. Beraud2, F. Fiorillo3, M. Baricco4 and J.L. Porteseil5

1  INSA Lyon, Laboratoire de Physicochimie Industrielle, 69621 Villeurbanne cedex, France
2  INSA Toulouse, Laboratoire de Physique des Solides, 31077 Toulouse cedex, France
3  Istituto Elettrotecnico Nazionale Galileo Ferraris, 10125 Torino, Italy
4  Dipartimento di Chimica dell'Università, 10125 Torino, Italy
5  CNRS, Laboratoire Louis Néel, 38042 Grenoble cedex, France

Non-oriented and grain-oriented 6.5% Si-Fe laminations have been prepared by means of the dynamic Chemical Vapour Deposition technique, exploiting a chemical reaction at 1000°C between a flowing SiCl4 + Ar mixture and an iron-silicon based substrate. The siliconizing process leads, from the first moments, to an epitaxial growth of Fe3Si, then to an underlayer solid solution by intermetallic diffusion. The optimum treatment has been chosen as 60 minutes at 1000°C, followed by 13 hour annealing in vacuum at the same temperature, which permits one to achieve the desired uniform concentration of Si around 6.5 wt %. NO and GO treated samples have been rnagnetically characterized in the frequency range 0.5 Hz - 1 kHz. A decrease between 15% and 50% of the energy loss has been observed in the CVD laminations.

© EDP Sciences 1995