Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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Page(s) | C5-997 - C5-1004 | |
DOI | https://doi.org/10.1051/jphyscol:19955117 |
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
J. Phys. IV France 05 (1995) C5-997-C5-1004
DOI: 10.1051/jphyscol:19955117
1 LGC, URA 192 du CNRS, ENSIGC, Chemin de la Loge, 31078 Toulouse cedex, France
2 LAAS du CNRS, 7 av. du Colonel Roche, 31077 Toulouse cedex, France
© EDP Sciences 1995
J. Phys. IV France 05 (1995) C5-997-C5-1004
DOI: 10.1051/jphyscol:19955117
Deposition of Thick Layers, in a New CVD Reactor
H. Vergnes1, E. Scheid2, P. Duverneuil1 and J.P. Couderc11 LGC, URA 192 du CNRS, ENSIGC, Chemin de la Loge, 31078 Toulouse cedex, France
2 LAAS du CNRS, 7 av. du Colonel Roche, 31077 Toulouse cedex, France
Abstract
This paper present a new kind of equipment called the annular reactor, which has been designed to treat a great number of substrates with a particularly good uniformity of thickness of deposits on the batch. Furthermore, a small scale pilot plant of this apparatus, called the sector reactor, has been built. It constitutes a very convenient laboratory piece of equipment, particularly useful to perform, at low cost, the unavoidable experimental part of the development of any new application. Theoretical and experimental results obtained with these reactors are presented and compared to those obtained when using tubular reactors. First tests in order to produce cheap thick layers are also reported.
© EDP Sciences 1995