| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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|
|---|---|---|
| Page(s) | C5-937 - C5-951 | |
| DOI | https://doi.org/10.1051/jphyscol:19955111 | |
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
J. Phys. IV France 05 (1995) C5-937-C5-951
DOI: 10.1051/jphyscol:19955111
Department of Chemistry, University of Helsinki, P.O. Box 6, FIN-00014 Helsinki, Finland
© EDP Sciences 1995
J. Phys. IV France 05 (1995) C5-937-C5-951
DOI: 10.1051/jphyscol:19955111
Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin Films
M. Leskelä and M. RitalaDepartment of Chemistry, University of Helsinki, P.O. Box 6, FIN-00014 Helsinki, Finland
Abstract
Atomic Layer Epitaxy (ALE) is a chemical vapor phase thin film deposition method which is based on saturative surface reactions. As the film is growing in a self-limiting manner ALE is a promising method to deposit thin, high-quality films for micro- and optoelectronics. In the present paper the deposition of different dielectric oxides, conducting oxides as well as nitrides is reviewed giving emphasis to precursors and their effect on growth mechanisms and film properties.
© EDP Sciences 1995