J. Phys. IV France
Volume 05, Numéro C5, Juin 1995Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|Page(s)||C5-937 - C5-951|
J. Phys. IV France 05 (1995) C5-937-C5-951
Atomic Layer Epitaxy in Deposition of Various Oxide and Nitride Thin FilmsM. Leskelä and M. Ritala
Department of Chemistry, University of Helsinki, P.O. Box 6, FIN-00014 Helsinki, Finland
Atomic Layer Epitaxy (ALE) is a chemical vapor phase thin film deposition method which is based on saturative surface reactions. As the film is growing in a self-limiting manner ALE is a promising method to deposit thin, high-quality films for micro- and optoelectronics. In the present paper the deposition of different dielectric oxides, conducting oxides as well as nitrides is reviewed giving emphasis to precursors and their effect on growth mechanisms and film properties.
© EDP Sciences 1995