| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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| Page(s) | C5-905 - C5-912 | |
| DOI | https://doi.org/10.1051/jphyscol:19955107 | |
J. Phys. IV France 05 (1995) C5-905-C5-912
DOI: 10.1051/jphyscol:19955107
Transmission Electron Microscopy Studies of (AIN-Si3N4) Codeposits Obtained by LPCVD
P. Marti1, F. Henry2, A. Mazel1, B. Armas2 and J. Sevely11 CEMES-LOE/CNRS, BP. 4347, 31055 Toulouse cedex, France
2 IMP/CNRS, BP. 5, Odeillo, 66125 Font-Romeu cedex, France
Abstract
Several (Al,Si,N) compounds have been obtained by LPCVD in a vertical hot-wall reactor using aluminium trichloride, silicon tetrachloride and ammonia as source gases, with nitrogen as the carrier gas. In order to determine both their structure and local chemical composition, several deposits have been examined by analytical transmission electron mimscopy combining electron diffraction (ED), high resolution electron microscopy (HREM) and electron energy loss spectroscopy (EELS). It has been confirmed that the chemical composition of the materials as well as the size of the "nanocrystals" observed in the deposits are strongly dependent on the temperature and the reactive gas flow. It has also been shown that for the range of temperature (1273 K-1373 K) used in this work these "nanocrystals" have the wurtzite structure of aluminium nitride.
© EDP Sciences 1995