| Numéro |
J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|
|
|---|---|---|
| Page(s) | C5-843 - C5-859 | |
| DOI | https://doi.org/10.1051/jphyscol:19955100 | |
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
J. Phys. IV France 05 (1995) C5-843-C5-859
DOI: 10.1051/jphyscol:19955100
1 Dipartimento di Fisica "A. Volta", Università degli Studi di Pavia, via Bassi 6, 27100 Pavia, Italy
2 Dipartimento di Fisica, Università degli Studi di Modena, via Campi 213a, 41100 Modena, Italy
3 SGS-Thomson Microelectronics, via Olivetti 2, 20041 Agrate B. (MI), Italy
© EDP Sciences 1995
J. Phys. IV France 05 (1995) C5-843-C5-859
DOI: 10.1051/jphyscol:19955100
Optical Properties of CVD-Deposited Dielectric Films for Microelectronic Devices
A. Sassella1, A. Borghesi2, S. Rojas3 and L. Zanotti31 Dipartimento di Fisica "A. Volta", Università degli Studi di Pavia, via Bassi 6, 27100 Pavia, Italy
2 Dipartimento di Fisica, Università degli Studi di Modena, via Campi 213a, 41100 Modena, Italy
3 SGS-Thomson Microelectronics, via Olivetti 2, 20041 Agrate B. (MI), Italy
Abstract
Optical characterization of dielectric films used in integrated circuit device manufacturing can give information on their optical behavior as well as on their structural properties and composition. The results obtained on several undoped and doped silicon oxides, silicon oxynitrides, and silicon nitrides usually employed for microelectronic applications both in the ultraviolet-visible and infrared spectral ranges are illustrated.
© EDP Sciences 1995