J. Phys. IV France
Volume 05, Numéro C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
Page(s) C5-79 - C5-86
Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-79-C5-86

DOI: 10.1051/jphyscol:1995506

Thermodynamic Analysis of the Chemical Vapor Deposition of Phosphorus Nitride (P3N5) Thin Films

S. Eroglu

TUBITAK-Marmara Research Center, Materials Research Division, P.K. 21, 41470 Gebze-Kocaeli, Turkey

Thermodynamic analysis of the chemical vapor deposition (CVD) of P3N5 has been performed using the method of the minimization of the Gibbs' free energy in order to evaluate the PH3-NH3 -N2 , PCl3-NH3-H2 and PBr3-NH3-H2 gaseous mixtures for their potential to synthesize single-phase P3N5 films at high yields. The conditions for the deposition of P3N5 have been determined as a function of input reactant gas ratio of PX3/(PX3+NH3) (X=H or Cl or Br) and deposition temperature at atmospheric pressure. A single phase P3N5 is deposited at almost al1 reactant ratios and at temperatures below about 700 K when the PH3-NH3-N2 system is used. The use of halide gas mixtures limits the formation of single phase P3N5 to narrow regions of temperature and input reactant gas ratio. The gaseous species generally present in greatest abundance are H2, N2, NH3, PH3, HCl, P4 PCl3, P2, HBr, PBr3 and PN. The thermodynamic analysis suggests that among the systems investigated here, the PH3-NH3-N2 mixture is the most promising because simultaneously it gives the highest P3N5 deposition yield and allows better control of the CVD process for the synthesis of P3N5 films.

© EDP Sciences 1995