Thermochemical and Mass Transport Modelling of the Chemical Vapour Deposition of Si1-xGex

M. Pons; E. Blanquet; C. Bernard; H. Rouch; J.M. Dedulle; R. Madar

doi:doi:10.1051/jphyscol:1995504

Numéro		J. Phys. IV France Volume 05, Numéro C5, Juin 1995 Proceedings of the Tenth European Conference on Chemical Vapour Deposition


Page(s)		C5-63 - C5-70
DOI		https://doi.org/10.1051/jphyscol:1995504

Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-63-C5-70
DOI: 10.1051/jphyscol:1995504

Thermochemical and Mass Transport Modelling of the Chemical Vapour Deposition of Si_1-xGe_x

M. Pons¹, E. Blanquet², C. Bernard², H. Rouch³, J.M. Dedulle³ and R. Madar³

¹ S2MC, URA 413/ENSEEG/INPG, BP. 75, Domaine Universitaire, 38402 Saint-Martin d'Hères, France.
² LTPCM, URA 29/ENSEEG/INPG, BP. 75, Domaine Universitaire, 38402 Saint-Martin d'Hères, France
³ LMGP, URA 1109/ENSEEG/INPG, BP. 46, Domaine Universitaire, 38402 Saint-Martin d'Hères, France

Abstract
The purpose of this article is to present, for the chemical vapour deposition process, mass transport rnodels with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected results of thermodynamic and mass transport analysis and of the coupled approach showed that, for the deposition of Si_1-xGe_x solid solution at 1300 K (system Si-Ge-CI-H-Ar), the themodynamic heterogeneous stability of the reactive gases and the thermal diffusion led to the germanium depletion of the deposit.