J. Phys. IV France
Volume 05, Numéro C5, Juin 1995Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|Page(s)||C5-45 - C5-54|
J. Phys. IV France 05 (1995) C5-45-C5-54
Modeling of Mass Transport and Gas Kinetics of the Reactive Sputtering ProcessS. Berg and C. Nender
Inst. of Technology, Uppsala University, Box 534, 751 21 Uppsala, Sweden
Modeling of reactive sputter desposition processes is a very important tool for fast and inventive process developrnent. A short review with some new results is given for a set of previously presented reactive sputtering models that has been successful in describing and predicting the processes. Examples are given for each case of reactive sputtering with one target and one reactive gas, reactivecompound- and co-sputtering as well as reactive sputtering using two reactive gases. The importance of process control in order to control the inherent instabilities and composition, is emphasized.
© EDP Sciences 1995