J. Phys. IV France
Volume 05, Numéro C5, Juin 1995Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|Page(s)||C5-3 - C5-44|
J. Phys. IV France 05 (1995) C5-3-C5-44
Morphology and Film Growth in CVD ReactionsV. Hlavacek, J.J. Thiart and D. Orlicki
Laboratory for Ceramic and Reaction Engineering, State University of New York at Buffalo, Amherst Campus, Buffalo, New York 14260, U.S.A.
The paper reports on three major aspects of CVD reactor simulation : 1) Modeling of transport phenomena in conventional CVD and their effect on the film growth ; 2) Modeling of plasma enhanced CVD and deposition of thin films ; 3) Modeling of füm growth and analysis of stability and morphology case studies. Case studies involve deposition of boron on W wire, deposition of Si-H and morphology development for a typical CVD reaction. Numerical methods of simulation are discussed in detail for each category mentioned above.
© EDP Sciences 1995